MaterialsItemsDescriptionEncapsulatingResinSiliconeresinElectrodesAgplatingcopperalloyDieattachSilverpasteChipInGaN Dimensions MaximumRatings(Tsoldering=25℃) ParameterSymbolRatingUnitDCOperatingCurrentIF350mAPulsedForwardCurrentIPF500mAESDSensitivityESD2000VJunctionTemperatureTj125℃50%PowerAngle2 1/2140degOperatingTemperatureTop-40～+85℃StorageTemperatureTstge-40～+100℃JunctionToHeat-SinkThermalResistanceRth15℃/W Electro-OpticalCharacteristics(Tsoldering=25℃) ParameterSymbolMinTypMaxUnitConditionLuminousFlux￠v----90----lmIF=350mAForwardVoltageVF----3.55----VColorTemperatureCCT----5650----K Note.LuminousFluxmeasurementtolerance: 10% ForwardVoltagemeasurementtolerance: